Optical Phonon Modes in Rectangular Graphene Quantum Dots

被引:0
作者
Qian, Jun [1 ]
Dutta, Mitra [1 ,2 ]
Stroscio, Michael A. [1 ,2 ,3 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[3] Univ Illinois, Dept Bioengn, Chicago, IL 60607 USA
关键词
CARBON NANOTUBE; CONTINUUM MODEL; BOTTLENECK; TRANSISTORS; TRANSPORT;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, graphene has been studied extensively as a promising material for future high-performance electronics. Dimensionally-confined graphene nanostructures are building blocks of devices and the carrier-phonon interactions in these device structures are frequently critical to their electronic properties. For a two-dimensional confined graphene nanosheet with orthogonal in-plane boundaries along armchair and zigzag edge, the confined carrier and optical phonon states are determined. The electron-longitudinal optical (LO)-phonon interactions in these graphene quantum dots are studied by the optical deformation potential theory. Phonon bottleneck effects are found for general graphene quantum dots. Carrier-LO-phonon scattering events are allowed only for graphene quantum dots with certain sizes; Fermi golden rule transition rates are evaluated approximately for cases where the dot dimensions are such that transitions are allowed.
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页码:542 / 550
页数:9
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