Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field

被引：3

作者：

Hernandez, C

Terki, F

Charar, S

Sadowski, J

Maude, D

Stanciu, V

Svedlindh, P

机构：

[1] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

[2] Univ Montpellier 2, Grp Etud Semicond CC074, F-34095 Montpellier 5, France

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Lund Univ, Max Lab, S-22100 Lund, Sweden

[5] MPI, CNRS, High Field Magnet Lab, F-38042 Grenoble, France

[6] Univ Uppsala, S-75120 Uppsala, Sweden

来源：

ACTA PHYSICA POLONICA A | 2003年 / 103卷 / 06期

关键词：

D O I：

10.12693/APhysPolA.103.613

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magnetotransport properties of GaMnAs single layers and InGaMnAs/ InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T-c approximate to 40 K), a new phase transition is observed close to 13 K.

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页码：613 / 619

页数：7

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