Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

被引：72

作者：

Feng, Xiao ^{[1
,2
]}

Feng, Yang ^{[1
]}

Wang, Jing ^{[3
,5
]}

Ou, Yunbo ^{[2
]}

Hao, Zhenqi ^{[1
]}

Liu, Chang ^{[1
]}

Zhang, Zuocheng ^{[1
]}

Zhang, Liguo ^{[1
,2
]}

Lin, Chaojing ^{[2
]}

Liao, Jian ^{[2
]}

Li, Yongqing ^{[2
]}

Wang, Li-Li ^{[1
,4
]}

Ji, Shuai-Hua ^{[1
,4
]}

Chen, Xi ^{[1
,4
]}

Ma, Xucun ^{[1
,4
]}

Zhang, Shou-Cheng ^{[3
]}

Wang, Yayu ^{[1
,4
]}

He, Ke ^{[1
,4
]}

Xue, Qi-Kun ^{[1
,4
]}

机构：

[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

[5] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 30期

基金：

中国国家自然科学基金;

关键词：

STATE; REALIZATION; DISORDER;

D O I：

10.1002/adma.201600919

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)(2)Te-3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.

引用

页码：6386 / +

页数：6

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