Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

被引：26

作者：

Choi, Ju-Young ^{[1
]}

Yu, Hwan-Chul ^{[1
]}

Lee, Jeongjun ^{[2
]}

Jeon, Jihyun ^{[2
]}

Im, Jaehyuk ^{[2
]}

Jang, Junhwan ^{[2
]}

Jin, Seung-Won ^{[1
]}

Kim, Kyoung-Kook ^{[3
]}

Cho, Soohaeng ^{[2
]}

Chung, Chan-Moon ^{[1
]}

机构：

[1] Yonsei Univ, Dept Chem, Wonju 26493, Gangwon Do, South Korea

[2] Yonsei Univ, Dept Phys, Wonju 26493, Gangwon Do, South Korea

[3] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 15073, South Korea

来源：

POLYMERS | 2018年 / 10卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

polyimide nanocomposite; graphene oxide; nonvolatile resistive memory; RRAM; WORM; GRAPHENE OXIDE; FUNCTIONALIZED GRAPHENE; CHEMICAL-REDUCTION; GRAPHITE; POLYIMIDES; NANOSHEETS; TRANSPARENCY; DEPOSITION; BEHAVIOR;

D O I：

10.3390/polym10080901

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (I-on/I-off = 3.41 x 10(8)). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.

引用

页数：11

共 64 条

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