Structural and optoelectronic properties of single crystalline SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD

12% Gallium-doped tin oxide (SnO(2):Ga) single crystalline films have been prepared on alpha-Al(2)O(3) (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600 degrees C. According to XRD patterns, the film deposited at 500 degrees C has the best single crystalline structure. Subsequently, 3 to 15% doped films were fabricated at 500 degrees C using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10% -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO(2). Film with resistivity of 1.09x10(-2)Omega cm, carrier concentration of 8.86x10(19)cm(-3) and Hall mobility of 6.49cm(2) v(-1) s(-1) was obtained at 5% of Ga concentration. The average transmittance for the SnO(2):Ga films in the visible range were over 90%.