Structural and optoelectronic properties of single crystalline SnO2:Ga films deposited on α-Al2O3 (0001) by MOCVD

被引：1

作者：

Pei, Xuan ^{[1
]}

Ji, Feng ^{[1
]}

Ma, Jin ^{[1
]}

Ning, Ti ^{[1
]}

Song, Zhenguo ^{[1
]}

Luan, Caina ^{[1
]}

Tan, Yongliang ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China

来源：

MULTI-FUNCTIONAL MATERIALS AND STRUCTURES II, PTS 1 AND 2 | 2009年 / 79-82卷

关键词：

SnO(2):Ga; MOCVD; THIN-FILMS; ELECTRICAL-PROPERTIES; SOL-GEL;

D O I：

10.4028/www.scientific.net/AMR.79-82.763

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

12% Gallium-doped tin oxide (SnO(2):Ga) single crystalline films have been prepared on alpha-Al(2)O(3) (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The grown temperatures were varied from 400 to 600 degrees C. According to XRD patterns, the film deposited at 500 degrees C has the best single crystalline structure. Subsequently, 3 to 15% doped films were fabricated at 500 degrees C using the same method, except that Gallium organometallic (OM) source was injected in pulsed-mode for the 3, 5 and 10% -doped films. Then, structural and optoelectronic properties of the films were investigated in detail. The obtained films all have the rutile structure of pure SnO(2). Film with resistivity of 1.09x10(-2)Omega cm, carrier concentration of 8.86x10(19)cm(-3) and Hall mobility of 6.49cm(2) v(-1) s(-1) was obtained at 5% of Ga concentration. The average transmittance for the SnO(2):Ga films in the visible range were over 90%.

引用

页码：763 / 766

页数：4

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