Two-layer Hall effect model for intermediate band Ti-implanted silicon

被引：36

作者：

Olea, J. ^{[1
]}

Gonzalez-Diaz, G. ^{[1
]}

Pastor, D. ^{[1
]}

Martil, I. ^{[1
]}

Marti, A. ^{[2
]}

Antolin, E. ^{[2
]}

Luque, A. ^{[2
]}

机构：

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Aplicada Elect & Elect 3, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, Escuela Tecn Super Ingenieros Telecomunicac, Inst Energia Solar, E-28040 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 06期

关键词：

IMPURITY BAND; EFFICIENCY; MOBILITY; CARRIERS; CELL;

D O I：

10.1063/1.3561374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-dependent sheet resistance and Hall effect measurements in the 7-400 K range. The experimental results are successfully explained by means of an analytical two-layer model, in which the implanted layer and the substrate behave as an IB/n-Si type junction. We deduce that the IB is located at 0.38 eV below the conduction band, which is around one third of the Si bandgap, i.e., theoretically close to the optimum location for an IB. Finally, we obtain that carriers at the IB behave as holes with a mobility of 0.4-0.6 cm(2) V(-1) s(-1). This extremely low mobility is the one expected for a semifilled, metallic band, being this metallic condition of the IB a requirement for IB solar cells. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3561374]

引用

页数：8

共 23 条

[1] THEORY OF HALL EFFECT IN DISORDERED SYSTEMS - IMPURITY BAND CONDUCTION .2. [J].