Characterization of erbium-silicided Schottky diode junction

被引：52

作者：

Jang, M ^{[1
]}

Kim, Y ^{[1
]}

Shin, J ^{[1
]}

Lee, S ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Future Technol Res Div, Taejon 305350, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 06期

关键词：

equivalent circuit; erbium-silicide; Schottky diode; trap;

D O I：

10.1109/LED.2005.848074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5 x 10(13) traps/cm(2), 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.

引用

页码：354 / 356

页数：3

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