Displacement Profile of Micromachined Nano-Electro-Mechanical-Ultrasonic Pressure Sensor: A Comparative Analysis

被引:5
作者
Dastidar, Avik Ghosh [1 ,2 ]
Tiwari, Ramesh Chandra [3 ]
Maity, Reshmi [4 ]
Maity, N. P. [4 ]
机构
[1] Mizoram Univ, Aizawl 796004, India
[2] Regent Educ & Res Fdn, Kolkata 700121, India
[3] Mizoram Univ, Dept Phys, Aizawl 796004, India
[4] Mizoram Univ, Dept Elect & Commun Engn, Aizawl 796004, India
来源
2021 IEEE 21ST INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE NANO 2021) | 2021年
关键词
TRANSDUCER; MODEL; CMUT;
D O I
10.1109/NANO51122.2021.9514350
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present study aims to unveil the efficacy of three different theoretical models namely both sides clamped circular plates model, clamped circular model with nonlocal plate theory (modified for nano scale) and membrane displacement model using silicon nitride (Si3N4) capacitive micromachined ultrasonic transducer (CMUT). To address the edge effects in calculation of capacitance of CMUT which should not be neglected in case of small dimension like micrometer or less, Landau & Lifschitz method of fringing has been incorporated in all these three models to precisely compute the displacement profiles. To validate these analytical models, the Finite Element Modelling (FEM) model has been built with COMSOL. The thorough investigation for various radius and thickness of the diaphragm of the CMUT has been done to reveal the superiority of a particular analytical model depending on the CMUT dimension.
引用
收藏
页码:60 / 63
页数:4
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