Coexistence of Negatively and Positively Buckled Isomers on n+-Doped Si(111) - 2 x 1

被引：19

作者：

Bussetti, G. ^{[1
,2
]}

Bonanni, B. ^{[2
]}

Cirilli, S. ^{[2
]}

Violante, A. ^{[2
]}

Russo, M. ^{[2
]}

Goletti, C. ^{[2
]}

Chiaradia, P. ^{[2
]}

Pulci, O. ^{[1
,3
]}

Palummo, M. ^{[1
,3
]}

Del Sole, R. ^{[1
,3
]}

Gargiani, P. ^{[4
,5
]}

Betti, M. G. ^{[4
,5
]}

Mariani, C. ^{[4
,5
]}

Feenstra, R. M. ^{[6
]}

Meyer, G. ^{[7
]}

Rieder, K. H. ^{[8
]}

机构：

[1] Univ Roma Tor Vergata, ETSF, NAST, Dipartimento Fis, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, CNISM, I-00133 Rome, Italy

[3] Univ Roma Tor Vergata, MIFP, I-00133 Rome, Italy

[4] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[5] Univ Roma La Sapienza, CNISM, Rome, Italy

[6] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[7] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[8] Max Planck Soc, Fritz Haber Inst, Dept Chem Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 06期

基金：

美国国家科学基金会;

关键词：

SURFACE-STATE BAND; OPTICAL-PROPERTIES; EXCITONS; SILICON; 2X1;

D O I：

10.1103/PhysRevLett.106.067601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A long-standing puzzle regarding the Si(111) - 2 x 1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photoemission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.

引用

页数：4

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