A GaAs-Based Hybrid Integration of a Tunneling Diode and a 1060-nm Semiconductor Laser

被引：9

作者：

Mi, Junping ^{[1
]}

Yu, Hongyan ^{[1
]}

Wang, Huolei ^{[1
]}

Tan, Shaoyang ^{[1
]}

Chen, Weixi ^{[2
]}

Ding, Ying ^{[3
]}

Pan, Jiaoqing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 02期

关键词：

Hybrid integration; GaAs; microwave photonics; optical bistability; oscillator; semiconductor lasers; tunnel diode; OPTOELECTRONIC OSCILLATOR; MICROSCOPY; CIRCUIT;

D O I：

10.1109/LPT.2014.2364073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at similar to 1060 nm, on GaAs substrate. The low-frequency operation of the integrated circuit was measured and obvious negative differential resistance regions were shown in the electrical and optical output. The electrical and optical bistability were measured, and the peak and valley voltage were 2.03 and 2.17 V, respectively. A 140-mV-wide hysteresis loop and an optical on/off ratio of 21 dB were obtained. The device has potential applications in biomedicine and optical interconnects.

引用

页码：169 / 172

页数：4

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