Reliability and Technology Scaling Beyond the 10nm Node

被引：0
|
作者：
Oates, Anthony S. [1 ]
机构：
[1] TSMC Ltd, 168 Pk Ave,2 Hsinchu Sci Pk, Hsinchu 30075, Taiwan
来源：
PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) | 2015年
关键词：
INDUCED SOFT ERRORS; BREAKDOWN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The rapid pace of technological progress over the past 40 years would not have been possible without a concomitant improvement in long - term reliability of circuits [1]. Despite significant challenges, circuit reliability has been maintained, preventing it from constraining the rate of scaling. Looking forward, we anticipate almost continual innovation in the architecture and materials of transistors and interconnect. In this paper we will examine the reliability issues that have the potential to impact the future pace of technology progression.
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页码：1 / 3
页数：3
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