INTERFACIAL PROPERTIES OF THE K-DOPED C60: CUPC HETEROJUNCTIONS

被引:0
作者
Cheng, Chiu-Ping [1 ]
Chen, Wen-Yen [1 ]
Wei, Ching-Hsuan [2 ]
Pi, Tun-Wen [2 ]
机构
[1] Natl Chiayi Univ, Grad Inst Optoelect & Solid State Elect, Dept Appl Phys, Chiayi 60004, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
来源
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
关键词
ENERGY-LEVEL ALIGNMENT; ELECTRONIC-STRUCTURE; SURFACE; CELLS; METAL;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report on the interfacial properties of the K-doped C-60: copper phthalocyanine (CuPc) heterojunctions, studied via synchrotron-radiation photoemission. The K-doped heterointerfaces were obtained by means of C-60 on K1.5CuPc and CuPc on K3C60. The valence-band and K 3p core-level spectra show that the K diffuses and transfers negative charge into C-60 overlayer at the C-60/K1.5CuPc interface, while only physisorption could be found at the CuPc/K3C60 interface. A significant shift of the vacuum level is observed in both cases, caused by the charge transfer for the C60/K1.5CuPc, while by the pillow effect for the CuPc/K3C60. The creation of gap states and an increased separation between the lowest unoccupied molecular orbital of C-60 and the highest occupied molecular orbital of CuPc at the C-60/K1.5CuPc interface reveal that the K-doped film could improve the photovoltaic effect. However, the advantage has not been found at the CuPc/K3C60 interface.
引用
收藏
页码:763 / +
页数:3
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