GaN based LEDs grown by molecular beam epitaxy

被引：6

作者：

Averbeck, R ^{[1
]}

Graber, A ^{[1
]}

Tews, H ^{[1
]}

Bernklau, D ^{[1
]}

Barnhofer, U ^{[1
]}

Riechert, H ^{[1
]}

机构：

[1] Siemens AG, Corp Technol, D-81730 Munich, Germany

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II | 1998年 / 3279卷

关键词：

GaN; InGaN; heterostructure; light emitting diode; molecular beam epitaxy;

D O I：

10.1117/12.304427

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the growth of GaN, InGaN and GaN/InGaN/GaN pn-junctions grown on sapphire by RF-plasma assisted MBE. MBE allows us to grow high quality nitrides with growth rates around 1 mu m/h at relatively low temperatures. Thereby p-type doping with Mg and the incorporation of In in InGaN sire greatly facilitated. Device-typical n- and p-type doping levels yield room temperature mobilities of 220 cm(2)/Vs and 10 cm(2)/Vs, respectively. InGaN with In contents of more than 40% is readily achieved. LEDs fabricated from heterostructures with a 4 mn InGaN layer show bright blue of green electroluminescence depending on the In content. Various effects in the electroluminescence caused by fluctuations in the conduction and valence band will be discussed, the most striking one a reduction in linewidth with increasing temperature.

引用

页码：28 / 35

页数：8