Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates

被引:100
作者
Anderson, Jeremy T.
Munsee, Craig L.
Hung, Celia M.
Phung, Tran M.
Herman, Gregory S.
Johnson, David C.
Wager, John F.
Keszler, Douglas A.
机构
[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[3] Univ Oregon, Inst Mat Sci, Dept Chem, Eugene, OR 97403 USA
[4] Hewlett Packard Corp, Corvallis, OR 97330 USA
关键词
D O I
10.1002/adfm.200601135
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
New thin-film dielectrics and nanolaminates have been synthesized via aqueous-solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives. X-ray reflectivity, imaging, and metal-insulator-metal capacitor performance reveal that smooth, atomically dense films are readily produced by spin coating and modest thermal treatment (T < 325 degrees C). Dielectric characteristics include permittivities covering the range of 9-12 with breakdown fields up to 6 MV cm(-1). Performance as gate dielectrics is demonstrated in field-effect transistors exhibiting small gate-leakage currents and qualitatively ideal device performance. The low-temperature processing, uniformity, and pore-free nature of the films have also allowed construction of unique, high-resolution nanolaminates exhibiting individual layers as thin as 3 nm.
引用
收藏
页码:2117 / 2124
页数:8
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