Ultra-low voltage high-speed Schmitt trigger circuit in SOI MOSFET technology

被引：13

作者：

Kim, Kyung Ki ^{[1
]}

Kim, Yong-Bin ^{[1
]}

机构：

[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

来源：

IEICE ELECTRONICS EXPRESS | 2007年 / 4卷 / 19期

关键词：

SOI; schmitt trigger; DTMOS; MTCMOS;

D O I：

10.1587/elex.4.606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a novel ultra-low voltage and high speed Schmitt trigger circuit designed in silicon-on-insulator (SOI) technology. The proposed circuit is designed using dynamic threshold MOS (DTMOS) technique and multi-threshold voltage CMOS (MT-CMOS) technique to reduce power consumption and accomplish high speed operation. The experiment shows the proposed Schmitt trigger circuit consumes 4.68 mu W at 0.7V power supply voltage and the circuit demonstrates the maximum switching speed of 170 psec.

引用

页码：606 / 611

页数：6

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