A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

被引：0
|
作者：
Meng, Nan [1 ]
Fernandez, J. Ferrer [1 ]
Vignaud, Dominique [1 ]
Dambrine, Gilles [1 ]
Happy, Henri [1 ]
机构：
[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, BP 60069,Ave Poincare, F-59652 Villeneuve Dascq, France
来源：
2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2010年
关键词：
GRAPHITE; BANDGAP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High frequency characterization of epitaxial-grown graphene nano ribbon based field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of Si-faced silicon carbide. The intrinsic current gain cut-off frequency of 10 GHz was obtained. A small signal equivalent circuit model of this device was proposed which open a potentiality to the modelling of GNR based HF electronics.
引用
收藏
页码：294 / 297
页数：4
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