Energy-Efficient Write Circuit in STT-MRAM Based Look-Up Table (LUT) Using Comparison Write Scheme

被引：0

作者：

Lee, Seungjin ^{[1
]}

Yim, Taegun ^{[1
]}

Lee, Choongkeun ^{[1
]}

Cho, Kyungseon ^{[1
]}

Yoon, Hongil ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul, South Korea

来源：

PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017) | 2017年

关键词：

Energy-Efficient; look-up table; STT-MRAM;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, the circuit is proposed that selectively changes the memory required to perform a write operation in a LUT composed of several spin-torque transfer magnetic RAM(STT-MRAM)s. When write a new data in the STT-MRAM LUT, unnecessary energy is consumed because the write operation is performed even though the data is the equal as the previous one. To overcome this problem, a comparison write scheme is proposed. The energy consumption is smaller than previous circuit's in [1], when 45 or less data is written again based on the 6bit-LUT having 64 memory cells.

引用

页码：288 / 289

页数：2