A genetic algorithm based inverse band structure method for semiconductor alloys

被引:40
作者
Kim, K [1 ]
Graf, PA [1 ]
Jones, WB [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
genetic algorithms; inverse problem; material design; electronic structure; pseudopotentials; optimization;
D O I
10.1016/j.jcp.2005.03.005
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We present an efficient and accurate method for searching for atomic configurations with target band structure properties. Our approach to this inverse problem is to search the atomic configuration space by repeatedly applying a forward solver, guiding the search toward the optimal configuration using a genetic algorithm. For the forward solver, we relax the atomic positions, then solve the Schrodinger equation using a fast empirical pseudopotential method. We employ a hierarchical parallelism for the combined forward solver and genetic algorithm. This enables the optimization process to run on many more processors than would otherwise be possible. We have optimized AlGaAs alloys for maximum bandgap and minimum bandgap for several given compositions and discuss the results. This approach can be generalized to a wide range of applications in material design. (c) 2005 Elsevier Inc. All rights reserved.
引用
收藏
页码:735 / 760
页数:26
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