Oscillatory magnetic behavior in an ion-irradiated Si/Ni/Si sandwich system

被引：1
|
作者：
Banu, Nasrin [1 ,2 ]
Satpati, B. [3 ]
Srihari, V [4 ]
Dev, B. N. [1 ,5 ,6 ]
机构：
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, 2A & 2B Raja SC Mullick Rd, Kolkata 700032, India
[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Horni Bhabha Rd, Bombay 400005, Maharashtra, India
[3] Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, 1-AF, Kolkata 700064, India
[4] Bhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Bombay 400085, Maharashtra, India
[5] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India
[6] Indian Inst Technol Kharagpur, Sch Nano Sci & Technol, Kharagpur 721302, W Bengal, India
来源：
PHYSICA B-CONDENSED MATTER | 2018年 / 550卷
关键词：
Thin film; Ion irradiation; Magnetism; FERH THIN-FILMS; NANOSTRUCTURES;
D O I：
10.1016/j.physb.2018.08.038
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated the evolution of magnetic behavior with ion fluence in ion irradiation of a Si/Ni/Si sandwich system. An oscillatory behavior of the saturation magnetic moment and the coercive field has been observed with increasing ion fluence. As reported earlier, with increasing ion fluence, this system also shows an oscillatory amorphization and recrystallization of the Si substrate on which the Ni layer was grown. Ion beam induced Ni redistribution, associated with the oscillatory behavior of amorphization and recrystallization of Si, appears to be responsible for the oscillatory magnetic behavior in the sandwich structure.
引用
收藏
页码：199 / 206
页数：8
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