Diffusion barrier performance of TiVCr alloy film in Cu metallization

被引：12

作者：

Tsai, Du-Cheng ^{[1
]}

Huang, Yen-Lin ^{[1
]}

Lin, Sheng-Ru ^{[1
]}

Jung, De-Ru ^{[1
]}

Chang, Shou-Yi ^{[1
]}

Shieu, Fuh-Sheng ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 11期

关键词：

Nitrides; Sputtering; Electron microscopy; Thermal properties; THIN-FILMS; COPPER; LAYER; CAPABILITY; TITANIUM; TAN; SI;

D O I：

10.1016/j.apsusc.2010.12.149

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 degrees C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements' alloy barrier layer is very beneficial to prevent Cu diffusion. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4923 / 4927

页数：5

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