Wafer-Scale W-Band Power Amplifiers Using On-Chip Antennas

被引：12

作者：

Atesal, Yusuf A. ^{[1
]}

Cetinoneri, Berke ^{[1
]}

Alhalabi, Ramadan A. ^{[1
]}

Rebeiz, Gabriel M. ^{[1
]}

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM | 2010年

关键词：

Millimeter-wave integrated circuits; power amplifier (PA); silicon germanium (SiGe) HBT; W-band;

D O I：

10.1109/RFIC.2010.5477386

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents, for the first time, a W-band SiGe power amplifier designed and fabricated together with a high-efficiency on-chip microstrip antenna. The antenna/amplifier results in an effective radiated power (ERP=P(t)G(t)) > 10 dBm from 88 to 98 GHz, with a peak of 14.6 dBm at 92 GHz. The chip consumes 120 mA from a 1.7 V supply. The antenna/amplifier approach can be extended to a large number of elements (8x8) and allows for efficient wafer-scale power combining and phased-array scanning.

引用

页码：469 / 472

页数：4

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