Ce3+ and Tb3+ singly- and co-doped MgGd4Si3O13 for ultraviolet light emitting diodes and field emission displays

被引：39
作者：
Zhou, Xufeng [1 ]
Zhang, Zhiya [1 ]
Wang, Yuhua [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 15期
基金：
美国国家科学基金会;
关键词：
WHITE-LIGHT; PHOTOLUMINESCENCE PROPERTIES; ENERGY-TRANSFER; LUMINESCENCE; PHOSPHOR; MN2+; BA3MGSI2O8-EU2+; GENERATION; SILICATE; DEVICES;
D O I：
10.1039/c4tc02807d
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new silicate phosphor MgGd4Si3O13:Ce3+,Tb3+ was successfully synthesized with the objective of application in ultraviolet-excited light emitting diodes (LEDs) and field emission displays (FEDs). The structural and photoluminescence (PL) properties of un-doped MgGd4Si3O13 were studied. The PL properties and the energy transfer from Gd3+ to Tb3+ and Ce3+ to Tb3+ in Ce3+ and Tb3+ singly- and co-doped MgGd4Si3O13 were discussed. Ce3+ occupying two different crystalline sites show diverse PL properties and distinct energy transfer efficiencies to Tb3+. The cathodoluminescence (CL) spectra, depending on the accelerating voltage and probe current, were also studied. Excellent degradation resistance properties with good colour stability were obtained with continuous low-voltage electron-beam excitation.
引用
收藏
页码：3676 / 3683
页数：8
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