Improvement of field emission from printed carbon nanotubes by a critical bias field

被引：16
作者：
Lee, HJ
Moon, SI
Kim, JK
Lee, YD
Nahm, S
Yoo, JE
Han, JH
Lee, YH
Hwang, SW
Ju, BK
机构：
[1] Korea Univ, Div Mat Sci & Engn, Seoul 1367011, South Korea
[2] Korea Univ, Dept Elect & Comp Engn, Seoul 136701, South Korea
[3] Korea Inst Sci & Technol, Seoul 136791, South Korea
[4] Iljin Nanotech Co Ltd, Seoul 157810, South Korea
[5] Korea Univ, Dept Phys, Seoul 136701, South Korea
[6] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 01期
关键词：
D O I：
10.1063/1.1953889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron. microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 V/mu m, the electron emission current density with good uniform emission sites reached the value of 2.13 mA/cm(2) which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase. in-the field-enhancement factor. (c) 2005 American Institute of Physics.
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页数：3
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