Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2 substrates by pulsed laser deposition

被引：11
作者：
Liu, Xiaohui [1 ,2 ]
Xu, Meng [1 ,2 ]
Ma, Jin [1 ,2 ]
Zhang, Xijian [1 ,2 ]
Luan, Caina [1 ,2 ]
Feng, Xianjin [1 ,2 ]
Song, Aimin [1 ,2 ,3 ]
机构：
[1] Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
[3] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
CERAMICS INTERNATIONAL | 2017年 / 43卷 / 17期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
Epitaxial growth; Cuprous oxide; Electrical properties; Pulsed laser deposition; OXIDE THIN-FILMS; CONDUCTIVITY; FABRICATION; PRESSURE; GROWTH;
D O I：
10.1016/j.ceramint.2017.08.098
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Copper oxide films have been deposited on the Y-stabilized ZrO2 (YSZ) (100) substrates by pulsed laser deposition and the effect of oxygen pressure (PO2) on the film properties was investigated in detail. The phase, crystallinity, and surface morphology of the films were strongly influenced by PO2 and the film prepared at 0.09 Pa was pure cuprous oxide (Cu2O) having the best film crystallinity. An out-of-plane epitaxial relationship of Cu2O (110)parallel to YSZ (100) with six different kinds of domain structure were observed for the 0.09 Pa-deposited sample and the corresponding in-plane epitaxial relationships were deduced. The lowest resistivity of 13.412 Omega cm and highest Hall mobility of 16.3 cm(2) v(-1) s(-1) were also obtained for the film deposited at 0.09 Pa. The optical band gap of the as-prepared copper oxide films varied from 2.37 to 2.57 eV.
引用
收藏
页码：15500 / 15504
页数：5
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