High quality Germanium-On-Insulator wafers with excellent hole mobility

被引：58
作者：
Nguyen, Q. T.
Damlencourt, J. F.
Vincent, B.
Clavelier, L.
Morand, Y.
Gentil, P.
Cristoloveanu, S.
机构：
[1] INP Grenoble Minatec, IMEP, F-38016 Grenoble 1, France
[2] CEA, DRT LETI CEA Grenoble, F-38054 Grenoble 9, France
[3] ST Microelect, F-38000 Grenoble, France
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 09期
关键词：
germanium; silicon germanium; Silicon-On-Insulator; Germanium-On-Insulator; Ge condensation; Pseudo-MOSFET; SOI; GeOI; SGOI;
D O I：
10.1016/j.sse.2007.07.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the fabrication and characterization of ultra thin and relatively thick SiGe-On-Insulator wafers with different Ge contents prepared by Ge condensation technique. The fabrication procedures as well as the structural analysis are detailed. The electrical properties of advanced strained SiGe-On-Insulator (SGOI) and relaxed Germanium-On-Insulator (GeOI) wafers were investigated using the Pseudo-MOSFET method and then compared with Silicon-On-Insulator (SOI) and strained Silicon-On-Insulator (sSOI) structures. GeOI wafers with 10-nm and 100-nm film thickness show exceptionally high hole mobility as compared to both SOI and sSOI structures. The hole mobility can reach 400 cm(2)/V s. It is found that the mobilities for holes and electrons vary in opposite directions as the Ge fraction is increased. The Ge content also impacts the threshold and flat-band voltages. 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1172 / 1179
页数：8
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