Size effects in Raman scattering of porous silicon

被引：0

作者：

Cho, CH ^{[1
]}

Seo, YS

Na, HY

Kim, Y

机构：

[1] Paichai Univ, Dept Phys, Taejon 302735, South Korea

[2] Korea Basic Sci Inst, Taejon 305333, South Korea

[3] Kongju Natl Univ, Dept Phys, Kongju 314701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 33卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Raman signal was measured in porous silicons which were made by changing the anodization current and the anodization time. As the current density and the anodization time were increased, it was observed that the peak of Raman signal was gradually shifted far from 520.5 cm(-1) and the full width at half maximum increased. Also, the decrease in the diameter of the columns in porous silicon was calculated.

引用

页码：292 / 296

页数：5

共 10 条

[1] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
CAMPBELL, IH
FAUCHET, PM
[J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[3] Cardona M., 1982, SPRINGER TOPICS APPL, V50, P19
[4] THE PHYSICS OF MACROPOROUS SILICON FORMATION
LEHMANN, V
[J]. THIN SOLID FILMS, 1995, 255 (1-2) : 1 - 4
[5] MUENDER A, 1992, SOLID STATE COMMUN, V221, P27
[6] Otto A., 1984, LIGHT SCATTERING SOL, P289
[7] DIRECT EVIDENCE FOR THE AMORPHOUS-SILICON PHASE IN VISIBLE PHOTOLUMINESCENT POROUS SILICON
PEREZ, JM
VILLALOBOS, J
MCNEILL, P
PRASAD, J
CHEEK, R
KELBER, J
ESTRERA, JP
STEVENS, PD
GLOSSER, R
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (05) : 563 - 565
[8] THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON
RICHTER, H
WANG, ZP
LEY, L
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (05) : 625 - 629
[9] OPTICAL-ABSORPTION EVIDENCE OF A QUANTUM SIZE EFFECT IN POROUS SILICON
SAGNES, I
HALIMAOUI, A
VINCENT, G
BADOZ, PA
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (10) : 1155 - 1157
[10] SUI Z, 1992, APPL PHYS LETT, V60, P2088

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