Characteristics of II-VI Quantum Dot Infrared Photo-Detectors

被引：0

作者：

Negi, C. M. S. ^{[1
]}

Kumar, Dharmendra ^{[2
]}

Kumar, Jitendra ^{[2
]}

机构：

[1] Banasthali Vidyapith, Dept Elect, Banasthali 304022, Rajasthan, India

[2] Indian Sch Mines, Dept Elect Engn, Dhanbad 826004, Jharkhand, India

来源：

ADVANCES IN OPTICAL SCIENCE AND ENGINEERING | 2015年 / 166卷

关键词：

PHOTODETECTORS;

D O I：

10.1007/978-81-322-2367-2_65

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We theoretically investigate the performance of a II-VI ZnCdSe/ZnSe-based quantum dot infrared photodetector (QDIP) utilizing intersubband hole transitions in the valence band of the QDs to absorb infrared radiation. The analysis starts with the computation of band structure via multi-band effective mass model based on the Luttinger-Kohn Hamiltonian with the inclusion of strain effects. The theoretical formulation is further used to determine the spectral responsivity and dark current characteristics of the QDIP.

引用

页码：533 / 539

页数：7