A high-performance full swing 1-bit hybrid full adder cell

被引:9
|
作者
Hussain, Shahbaz [1 ]
Hasan, Mehedi [2 ,3 ]
Agrawal, Gazal [1 ]
Hasan, Mohd [1 ]
机构
[1] Aligarh Muslim Univ, Dept Elect Engn, Aligarh, Uttar Pradesh, India
[2] North South Univ, Dept Elect & Comp Engn, Dhaka, Bangladesh
[3] Univ Sci & Technol Chittagong, Dept Elect & Elect Engn, Zakir Hossain Rd, Khulshi 4202, Chattogram, Bangladesh
关键词
1-bit adder; FinFET; full adder; hybrid adder; XOR-XNOR; DESIGN;
D O I
10.1049/cds2.12097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study proposes an 18-transistor full adder (FA) cell based on the full swing hybrid logic style. It has a first stage comprising the XOR-XNOR module followed by pass transistors and inverters to generate the sum and carry outputs. The performance evaluation of the proposed FA cell has been carried out using an HSPICE simulator at the 16 nm process node by comparing it with eight existing FAs over the supply voltage ranging from 0.4 to 1.0 V. The proposed adder achieved 34.77% improvement in propagation delay, 48.8% improvement in average power and 66.58% improvement in Power Delay Product compared to the conventional CMOS Mirror adder while operating at 0.8 V. Moreover, its performance metrics are also better than those of other latest existing adder cells. Hence, the proposed FA is suitable for modern high performance digital processors.
引用
收藏
页码:210 / 217
页数:8
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