Thermal properties of graphene and few-layer graphene: applications in electronics

被引：86
作者：
Yan, Zhong [1 ,2 ]
Nika, Denis L. [1 ,2 ,3 ]
Balandin, Alexander A. [1 ,2 ,4 ]
机构：
[1] Univ Calif Riverside, Dept Elect Engn, Bourns Coll Engn, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Mat Sci & Engn Program, Bourns Coll Engn, Nanodevice Lab, Riverside, CA 92521 USA
[3] Moldova State Univ, E Pokatilov Lab Phys & Engn Nanomat, Dept Phys & Engn, MD-2009 Kishinev, Moldova
[4] Quantum Seed LLC, Riverside, CA 92507 USA
来源：
IET CIRCUITS DEVICES & SYSTEMS | 2015年 / 9卷 / 01期
关键词：
thermal conductivity; graphene; phonons; reliability; few-layer grapheme; advanced electronics; intrinsic thermal conductivity; thermal management applications; FLG heat spreaders; heat generating areas; high-power density transistors; hot-spot temperature; device operation; device reliability; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; TEMPERATURE-DEPENDENCE; PHONON CONFINEMENT; RAMAN-SCATTERING; CONDUCTIVITY; SILICON; TRANSPORT; FILMS; HEAT;
D O I：
10.1049/iet-cds.2014.0093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors review thermal properties of graphene and few-layer graphene (FLG), and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the FLG heat spreaders integrated near the heat generating areas of the high-power density transistors. It has been demonstrated that FLG heat spreaders can lower the hot-spot temperature during device operation, resulting in improved performance and reliability of the devices.
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页码：4 / 12
页数：9
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