Evaluation of accelerated total dose testing of linear bipolar circuits

被引：29
作者：
Carrière, T [1 ]
Ecoffet, R
Poirot, P
机构：
[1] ASTRIUM SAS, F-78146 Velizy Villacoublay, France
[2] Ctr Natl Etud Spatiales, F-31055 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期
关键词：
D O I：
10.1109/23.903776
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different part types of linear bipolar technology were irradiated in order to evaluate the ability of accelerated total dose testing to describe the tolerance at very low dose rate. On all tested types, the bias current was the most sensitive parameter. Results confirm that elevated temperature irradiation performed at high dose rate is web adapted to define the tolerance of the bias current at very low dose rate. The best accelerated test conditions correspond to a dose rate of 0.55 rad/s and irradiation temperature of 100 degreesC. However, such a procedure is not applicable to determine the behavior of the offset parameters at low dose rate.
引用
收藏
页码：2350 / 2357
页数：8
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