Piezotronic effect in 1D van der Waals solid of elemental tellurium nanobelt for smart adaptive electronics

被引:41
作者
Gao, Shengjie [1 ]
Wang, Yixiu [1 ]
Wang, Ruoxing [1 ]
Wu, Wenzhuo [1 ,2 ]
机构
[1] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
关键词
tellurium nanobelt; 1D van der Waals solid; piezotronic effect; ATOMIC-LAYER MOS2; PIEZO-PHOTOTRONICS; TEMPERATURE-DEPENDENCE; TRIGONAL TELLURIUM; ENERGY-CONVERSION; CRYSTAL-STRUCTURE; BAND-STRUCTURE; ZNO NANOWIRES; GAN NANOBELTS; STRAIN;
D O I
10.1088/1361-6641/aa8605
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Emerging technologies in wearable systems demand that functional devices can adaptively interact with the human body, where mechanical stimuli are ubiquitous and abundant. However, the electrical manipulation of charge carriers underpins the operations of state-of-the-art devices, and the effective control of interfacial energetics for charge carriers by the dynamic mechanical stimuli is still a relatively unexplored degree of freedom for semiconductor nanodevices. Piezotronic effect in nanostructured piezoelectric semiconductors offers exciting opportunities in addressing the above challenges. Here we report the first experimental exploration of piezotronic effect in 1D van der Waals solid of p-type tellurium nanobelt and systematically investigate the strain-gated charge carriers transport properties. The strain-induced polarization charges at the [1010] surfaces of Te nanobelt can modulate the electronic transport through the interfacial effect on the Schottky contacts and the volumetric effect on the conducting channel. The competing phenomenon between interfacial and volumetric effects has been studied for the first time in piezotronics. Our research allows the access to a broad range of characterization and application of Te nanomaterials for piezotronics and could guide the future study of piezotronic effect in other materials. This progress in piezotronics, together with emerging methods for deterministic production and assembly of nanomaterials, leads to compelling opportunities for research from basic studies of piezoelectricity and semiconductor properties in functional nanomaterials to the development of smarter' electronics and optoelectronics.
引用
收藏
页数:9
相关论文
共 69 条
[1]   Novel Family of Chiral-Based Topological Insulators: Elemental Tellurium under Strain [J].
Agapito, Luis A. ;
Kioussis, Nicholas ;
Goddard, William A., III ;
Ong, N. P. .
PHYSICAL REVIEW LETTERS, 2013, 110 (17)
[2]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[3]   ELECTRONIC DISPLACEMENT IN TELLURIUM BY MECHANICAL STRAIN [J].
ARLT, G ;
QUADFLIE.P .
PHYSICA STATUS SOLIDI, 1969, 32 (02) :687-&
[4]   Varistor piezotronics: Mechanically tuned conductivity in varistors [J].
Baraki, Raschid ;
Novak, Nikola ;
Hofstaetter, Michael ;
Supancic, Peter ;
Roedel, Juergen ;
Froemling, Till .
JOURNAL OF APPLIED PHYSICS, 2015, 118 (08)
[5]  
Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/NNANO.2014.25, 10.1038/nnano.2014.25]
[6]   Wearable Sensors and Systems From Enabling Technology to Clinical Applications [J].
Bonato, Paolo .
IEEE ENGINEERING IN MEDICINE AND BIOLOGY MAGAZINE, 2010, 29 (03) :25-36
[7]   White and green light emissions of flexible polymer composites under electric field and multiple strains [J].
Chen, Li ;
Wong, Man-Chung ;
Bai, Gongxun ;
Jie, Wenjing ;
Hao, Jianhua .
NANO ENERGY, 2015, 14 :372-381
[8]   2-DIMENSIONAL REFINEMENT OF CRYSTAL STRUCTURE OF TELLURIUM [J].
CHERIN, P ;
UNGER, P .
ACTA CRYSTALLOGRAPHICA, 1967, 23 :670-&
[9]   INVESTIGATION OF THE ELECTRONIC-PROPERTIES OF TELLURIUM-ENERGY-BAND STRUCTURE [J].
COKER, A ;
LEE, T ;
DAS, TP .
PHYSICAL REVIEW B, 1980, 22 (06) :2968-2975
[10]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853