Modeling of a thin film pyroelectric pixel: Transient results

被引:0
|
作者
Teowee, G
Uhlmann, DR
机构
[1] Donnelly Corp, Tucson, AZ 85712 USA
[2] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
关键词
ferroelectric; pyroelectric; modeling; films; IR arrays;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pyroelectric thin films are receiving increasing attention for the next generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 mu m and 0.005 K are projected respectively. In this study, the 1-D transient response of a pixel consisting of black absorber, pyroelectric, Pt, TiO2, SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-air interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier layer and substrate thickness on the pyroelectric response are investigated.
引用
收藏
页码:941 / 949
页数:9
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