Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

被引：13

作者：

Zhao, QX ^{[1
]}

Wang, SM

Wei, YQ

Sadeghi, M

Larsson, A

Willander, M

机构：

[1] Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

[3] Univ Gothenburg, SE-41296 Gothenburg, Sweden

来源：

PHYSICS LETTERS A | 2005年 / 341卷 / 1-4期

关键词：

D O I：

10.1016/j.physleta.2005.04.089

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The radiative recombination in InxGa1-xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：297 / 302

页数：6

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