A Deep Level Transient Spectroscopy Study on Recrystallization of Ultra-Shallow Implanted Silicon

被引：0

作者：

Okutani, Masashi ^{[1
]}

Takashima, Shuhei ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

Yoo, Woo Sik ^{[2
]}

机构：

[1] Kyoto Inst Technol, Sakyo Ku, Kyoto 606, Japan

[2] WaferMasters Inc, San Jose, CA 95112 USA

来源：

ION IMPLANTATION TECHNOLOGY 2010 | 2010年 / 1321卷

关键词：

ultra-shallow junction; ion-implantation; recrystallization; rapid thermal anneal; photoluminescence; deep level transient spectroscopy; PHOTOLUMINESCENCE; DEFECTS; B+;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Defect formation and annihilation in ultra-shallow junctions (USJs) during an annealing process is characterized by deep level transient spectroscopy (DLTS). A difference in the recovery of implantation damage was clearly identified between samples with and without pre-amorphization-implantation (PAI). DLTS depth profiles reveal that the defects are formed at the region ten-times deeper than implanted depth. The photoluminescence (PL) intensity probing of the region having defects distinctly correlates to the quantity of defects detected by DLTS.

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页码：200 / +

页数：2

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