Defect engineering of two-dimensional transition metal dichalcogenides

被引:454
作者
Lin, Zhong [1 ,2 ]
Carvalho, Bruno R. [1 ,2 ,3 ]
Kahn, Ethan [2 ,4 ]
Lv, Ruitao [5 ]
Rao, Rahul [6 ,7 ]
Terrones, Humberto [8 ]
Pimenta, Marcos A. [3 ]
Terrones, Mauricio [1 ,2 ,4 ,9 ,10 ]
机构
[1] Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA
[2] Penn State Univ, Ctr Dimens & Layered Mat 2, University Pk, PA 16802 USA
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[6] Air Force Res Lab, Mat & Mfg Directorate, RXAS, Wright Patterson AFB, OH 45433 USA
[7] UES Inc, Dayton, OH 45432 USA
[8] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, 110 Eighth St, Troy, NY 12180 USA
[9] Penn State Univ, Dept Chem, University Pk, PA 16802 USA
[10] Shinshu Univ, Inst Carbon Sci & Technol, 4-17-1 Wakasato, Nagano 3808553, Japan
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
two-dimensional material; transition metal dichalcogenides; molybdenum disulfide; defects; electronic properties; SINGLE-LAYER MOS2; DER-WAALS HETEROSTRUCTURES; ACTIVE EDGE SITES; HYDROGEN EVOLUTION; RAMAN-SPECTROSCOPY; GRAIN-BOUNDARIES; MONOLAYER MOS2; ULTRATHIN NANOSHEETS; VAPOR-DEPOSITION; PHOTOLUMINESCENCE;
D O I
10.1088/2053-1583/3/2/022002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered materials, have provided researchers a fertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applications of TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defects is important in order to move forward the field of Defect Engineering in TMDs. Finally, we also provide our perspective on the challenges and opportunities in this emerging field.
引用
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页数:21
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