Efficiency spectrum of a CdTe X- and γ-ray detector with a Schottky diode

被引：11

作者：

Kosyachenko, LA ^{[1
]}

Maslyanchuk, OL ^{[1
]}

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

HIGH-RESOLUTION CDTE; PERFORMANCE;

D O I：

10.1002/pssc.200460661

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A study on the efficiency spectrum of CdTe X- and gamma-ray detectors utilizing Schottky diodes for different material parameters and diode structures is reported. Special attention is paid to the effect of deep levels and compensation on space-charge region width. It is shown that charge collection in the neutral region of the detector considerably contributes to the device efficiency. Calculations also show that the efficiency of a stacked detector can be higher than that of a bulk detector with ohmic contacts. (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.

引用

页码：1194 / 1199

页数：6

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