Low-temperature growth of SiO2 films by plasma-enhanced atomic layer deposition

Silicon dioxide (SiO2) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of 100 to 250 degreesC, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO2 films are ranged from 4.5 to 7.7 with the decmase of growth temperature. A SiO2 film grown at 250 degreesC exhibits a much lower leakage current than that grown at 100 degreesC due to its high film density and the fact that it contains deeper electron traps.