The effect of indentation-induced cracking on the apparent microhardness

被引：4
|
作者：
Hong, L
Bradt, RC
机构：
[1] UNIV ALABAMA, DEPT MET & MAT ENGN, TUSCALOOSA, AL 35487 USA
[2] PACIFIC NW LAB, RICHLAND, WA 99352 USA
来源：
JOURNAL OF MATERIALS SCIENCE | 1996年 / 31卷 / 04期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The phenomenon of apparent microhardness increase with increasing applied indentation test load, the reverse indentation size effect (RISE), was addressed from the viewpoint of indentation-induced cracking. The apparent microhardness when the cracking occurs was found to be related to the applied indentation test load as P-5/3. Previously published results on single crystals of silicon, GaAs, GaP and InP, which differ by a factor of four, all fall on the same line when analysed through this concept. It is concluded that the RISE is a result of the specimen cracking during the indentation.
引用
收藏
页码：1065 / 1070
页数：6
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