Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 μm

被引：15

作者：

Cong, D.-Y.

Martinez, A.

Merghem, K.

Moreau, G.

Lemaitre, A.

Provost, J.-G.

Le Gouezigou, O.

Fischer, M.

Krestnikov, I.

Kovsh, A. R.

Ramdane, A.

机构：

[1] Lab Photon & Nanostruct, CNRS, F-91460 Marcoussis, France

[2] ALCATEL THALES III, V Lab, F-91460 Marcoussis, France

[3] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

[4] NL Nanosemicond GmbH, D-44263 Dortmund, Germany

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 04期

关键词：

D O I：

10.1049/el:20073633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dynamic measurements of the Henry factor alpha(H) of InAs/GaAs Fabry-Perot lasers are compared for 3-, 5- and 10-QD layers. While alpha(H) dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.

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页码：222 / 224

页数：3

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