Two-Dimensional GeP-Based NIR Phototransistor

被引：0
作者：
Dushaq, Ghada [1 ]
Rasras, Mahmoud [1 ]
机构：
[1] New York Univ Abu Dhabi, Dept Elect & Comp Engn, POB 129188, Abu Dhabi, U Arab Emirates
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
关键词：
PHOTONICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
we demonstrate a gate-tunable photodetector based on multilayerd 2D GeP. Results show high responsivity and relatively low dark current with stable, reproducible, and remarkable broadband spectral response from UV to optical communication wavelengths. (C) 2021 The Author(s)
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页数：2
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