Bi-Doped SnO Nanosheets Supported on Cu Foam for Electrochemical Reduction of CO2 to HCOOH

被引：104

作者：

An, Xiaowei ^{[1
]}

Li, Shasha ^{[2
,3
]}

Yoshida, Akihiro ^{[1
,2
]}

Yu, Tao ^{[1
]}

Wang, Zhongde ^{[4
]}

Hao, Xiaogang ^{[4
]}

Abudula, Abuliti ^{[1
]}

Guan, Guoqing ^{[1
,2
]}

机构：

[1] Hirosaki Univ, Grad Sch Sci & Technol, 1 Bunkyocho, Hirosaki, Aomori 0368560, Japan

[2] Hirosaki Univ, IRI, Energy Convers Engn Lab, 2-1-3 Matsubara, Aomori 0300813, Japan

[3] Taiyuan Univ Sci & Technol, Coll Chem & Biol Engn, Taiyuan 030012, Shanxi, Peoples R China

[4] Taiyuan Univ Technol, Dept Chem Engn, Taiyuan 030024, Shanxi, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 45期

关键词：

CO2; electroreduction; Bi-doped SnO nanosheet; formic acid; faradaic efficiency; DFT calculation; FORMIC-ACID; CARBON-DIOXIDE; TIN ELECTRODES; EFFICIENT; ELECTROREDUCTION; SELECTIVITY; FORMATE; GRAPHENE;

D O I：

10.1021/acsami.9b13270

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Design and fabrication of efficient electrocatalysts is essential for electrochemical reduction of carbon dioxide (CO2). In this work, bismuth (Bi)-doped SnO nanosheets were grown on copper foam (Bi-SnO/Cu foam) by a one-step hydrothermal reaction method and applied for the electrochemical reduction of CO2 to formic acid (HCOOH). The experimental results indicated that Bi doping stabilized the divalent tin (Sn2+) existing on the surface of the electrocatalyst, making it difficult to be reduced to metallic tin (Sn-0) during the electrochemical reduction process. In addition, combining with density functional theory (DFT) calculations, it is found that Bi doping and electron transfer from the catalyst to the Cu foam substrate could enhance the adsorption of *OOCH intermediates. As such, the Bi-doped SnO electrocatalyst exhibited a superior faradaic efficiency of 93% at -1.7 V (vs Ag/AgCl) for the reduction of CO2 to HCOOH, together with a current density of 12 mA cm(-2) and excellent stability in at least 30 h of operation.

引用

页码：42114 / 42122

页数：9

共 55 条

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