Atomic-layer stacking dependence of the magnetocrystalline anisotropy in Fe-Co multilayer thin films at MgO(001) interface

被引：0

作者：

Nakamura, K. ^{[1
]}

Nozaki, K. ^{[1
]}

Hayashi, K. ^{[1
]}

Pradipto, A. -M. ^{[2
]}

Weinert, M. ^{[3
]}

Oguchi, T. ^{[4
]}

机构：

[1] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

[2] Inst Teknol Bandung, Fac Math & Nat Sci, Bandung 40132, Indonesia

[3] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA

[4] Osaka Univ, Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2021年 / 537卷

基金：

美国国家科学基金会;

关键词：

Magnetocrystalline anisotropy; atomic-layer stacking dependence; first-principles calculations; ELECTRONIC-STRUCTURE; MAGNETIC-ANISOTROPY; ALL-ELECTRON; ENERGY; IRON; MGO;

D O I：

10.1016/j.jmmm.2021.168175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetocrystalline anisotropy (MA) and electric-field-induced modification of the MA energy (E-field-induced MA modification) of Co-Fe multilayer thin films at MgO(001) interface with respect to atomic-layer stacking were investigated using first-principles calculations combined with the cluster expansion method. Although the magnetic quantities have very complicated dependence on atomic-layer stacking, we find that there are key short-range atomic-layer stackings. At the MgO interface, a double atomic-layer stacking of Fe on the MgO enhances an interfacial perpendicular MA while there is no role of the short-range stacking in the E-field-induced MA modification where a single Fe atomic-layer at the interface plays a role. The physical origins underlying these trends were subsequently elucidated by band structure calculations.

引用

页数：8

共 48 条

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