Generation of microwave chaotic oscillations in an integrated SiGe system

A self-oscillatory structure based on the SiGe technology is proposed for generation of dynamic chaos in the microwave range. A circuit dynamic model of this system taking into account the characteristics and constraints of applied active and passive elements and the circuit topology in a crystal is created. Dynamic regimes of the structure are studied; the existence of chaotic regimes is demonstrated, parameter domains corresponding to these regimes are determined. An SiGe crystal for a monolithic integrated chip realizing the proposed self-oscillatory structure according to the 0.25-mu m technology is developed and manufactured. Chip operation regimes are studied, stable generation of ultrawideband chaotic oscillations in a range of 3-8 GHz is obtained.