Impact of the Oxygen Flow during the Magnetron Sputtering Deposition on the Indium Tin Oxide thin films for Silicon Heterojunction Solar Cell

被引：0

作者：

Aissa, Brahim ^{[1
]}

Zakaria, Yahya ^{[1
]}

Abdallah, Amir A. ^{[1
]}

Kivambe, Maulid M. ^{[1
]}

Samara, Ayman ^{[1
]}

Shetty, Akshath Raghu ^{[1
]}

Cattin, Jean ^{[2
]}

Haschke, Jan ^{[2
]}

Boccard, Mathieu ^{[2
]}

Ballif, Christophe ^{[2
]}

机构：

[1] Hamad bin Khalifa Univ, Qatar Fdn, Qatar Environm & Energy Res Inst, POB 34110, Doha, Qatar

[2] Ecole Polytech Fed Lausanne, Inst Microengn, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71B, CH-2002 Neuchatel, Switzerland

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

Silicon Heterojunction; Indium Tin Oxide; Magnetron sputtering; ToF-SIMS; ELECTRICAL-PROPERTIES; AMORPHOUS-SILICON; CARRIER TRANSPORT; WORK FUNCTION; SPECTROSCOPY; PERFORMANCE;

D O I：

10.1109/pvsc40753.2019.8980906

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on the optoelectronic properties of ITO layers deposited by DC sputtering, using different oxygen to total flow ratios [r(O-2) = O-2/Ar, ranging from 1% to 8%], for silicon heterojunction (SHJ) solar cell application. The depth profiling of the various elements throughout the thicknesses and interfaces of the ITOs and thin films forming the SHJ device was determined by time-of-flight secondary ion mass spectrometry. Finally, the photovoltaic performance of the fabricated SHJ cells was evaluated with respect to the r(O-2) into the ITO layers. Lower r(O-2) was found to yield the best PV performance which is attributed to lower parasitic resistive losses.

引用

页码：2659 / 2666

页数：8

共 41 条

[21] Surface potentials of magnetron sputtered transparent conducting oxides [J].