Interface effects on the electroluminescence spectra in amorphous-Si/silicon oxynitride multilayer structures

被引：5

作者：

Wang Xiang ^{[1
]}

Huang Rui ^{[1
]}

Song Chao ^{[1
]}

Song Jie ^{[1
]}

Guo YanQing ^{[1
]}

机构：

[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2012年 / 55卷 / 07期

基金：

中国国家自然科学基金;

关键词：

electroluminescence spectrum; amorphous-Si/silicon oxynitride multilayer; interface; PHOTOLUMINESCENCE; ORIGIN; FILMS;

D O I：

10.1007/s11433-012-4771-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report room-temperature electroluminescence (EL) from as-deposited amorphous-Si/silicon oxynitride multilayer structure prepared by plasma enhanced chemical vapor deposition. We prepared 8-period a-Si/SiO (x) N (y) multilayer with thickness of 4 nm both for the Si and SiO (x) N (y) sublayers. The EL spectral profile exhibits some obviously modulated features upon the barrier material. By adjusting the nitride/oxygen ratio in the barrier layer, the EL peak position can be tuned from 750 nm to 695 nm. From the result of the Raman and Fourier transform infrared results, the EL is attributed to the radiative recombination of electrons and holes in luminescent centers related to the interface. The different interface characteristics induce the shift of EL peak position.

引用

页码：1194 / 1197

页数：4

共 45 条

[41] First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories
Courtot-Descharles, A
Paillet, P
Leray, JL
Musseau, O
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2000, 3 (1-2) : 143 - 148
[42] Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures
Badali, Yosef
Nikravan, Afsoun
Altindal, Semsettin
Uslu, Ibrahim
JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (07) : 3510 - 3520
[43] Investigation of Optical Properties and Photoluminescence of Amorphous Silicon Carbide in a-SiC/Si3N4 Quantum Well Structures Fabricated by PECVD Technique
Kamyab, L.
Rusli
Yu, M. B.
He, L.
Dua, M.
EUROCVD 17 / CVD 17, 2009, 25 (08): : 727 - 734
[44] Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures
Dhifallah, I.
Daoudi, M.
Ouerghli, A.
Oueslati, M.
Chtourou, R.
SUPERLATTICES AND MICROSTRUCTURES, 2011, 49 (05) : 519 - 526
[45] Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures
Xu, Zhongguang
Zhu, Chenxin
Huo, Zongliang
Zhao, Shengjie
Liu, Ming
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (18)

← 1 2 3 4 5 →