A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor

被引：49

作者：

Mojarad, Shahin A. ^{[1
]}

Kwa, Kelvin S. K. ^{[1
]}

Goss, Jonathan P. ^{[1
]}

Zhou, Zhiyong ^{[1
]}

Ponon, Nikhil K. ^{[1
]}

Appleby, Daniel J. R. ^{[1
]}

Al-Hamadany, Raied A. S. ^{[1
]}

O'Neill, Anthony ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

CONDUCTION; MEMORY;

D O I：

10.1063/1.3673574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The leakage current characteristics of SrTiO3 MIM capacitors, fabricated using atomic layer deposition, are investigated. The characteristics are highly sensitive to the polarity and magnitude of applied voltage bias, punctuated by sharp increases at high field. The characteristics are also asymmetric with bias and the negative to positive current crossover point always occurs at a negative voltage bias. In this work, a model comprising thermionic field emission and tunneling phenomena is proposed to explain the dependence of leakage current upon the device parameters quantitatively. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3673574]

引用

页数：6

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