Imaging electron emission from diamond film surfaces:: N-doped diamond vs. nanostructured diamond

被引：20

作者：

Köck, FAM ^{[1
]}

Garguilo, JM ^{[1
]}

Nemanich, RJ ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

关键词：

electron emission; diamond; N-doped;

D O I：

10.1016/S0925-9635(01)00401-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reports direct imaging of electron emission from two different classes of diamond containing films that were prepared by microwave plasma chemical vapor deposition. These are N-doped, and nanostructured diamond containing films. The electron emission is excited by UV light (photoemission) or by an applied field (field emission). The photo electron emission microscopy (PEEM) of the N-doped films exhibited uniform emission, and upon heating to similar to 700 degreesC, field electron emission microscopy (FEEM) of the films showed similar uniform emission. In contrast, FEEM of the nanostructured films showed high brightness, localized emission sites at room temperature. The results indicate different processes for electron emission from nanostructured and N-doped diamond films. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1714 / 1718

页数：5

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