Selective-area epitaxy and in-situ etching of GaAs using tris-dimethylaminoarsenic by chemical beam epitaxy

被引:3
|
作者
Li, NY [1 ]
Tu, CW [1 ]
机构
[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
来源
COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷
关键词
D O I
10.1557/PROC-421-15
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:15 / 20
页数:6
相关论文
共 50 条
  • [41] In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
    Birudavolu, S
    Luong, SQ
    Nuntawong, N
    Xin, YC
    Hains, CP
    Huffaker, DL
    JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 97 - 103
  • [42] Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy
    Yoshiba, Ippei
    Iwai, Takayuki
    Uehara, Takahiro
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 190 - 193
  • [43] IN-SITU OBSERVATION OF GAAS SELECTIVE EPITAXY ON GAAS (111)B SUBSTRATES
    ALLEGRETTI, F
    INOUE, M
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 354 - 358
  • [44] SELECTIVE AREA EPITAXY AND GROWTH OVER PATTERNED SUBSTRATES BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    YANG, L
    WU, MC
    CHEN, YK
    ELECTRONICS LETTERS, 1991, 27 (01) : 3 - 5
  • [46] Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy
    Chang, Yoon Jung
    Simmonds, Paul J.
    Beekley, Brett
    Goorsky, Mark S.
    Woo, Jason C. S.
    APPLIED PHYSICS LETTERS, 2016, 108 (16)
  • [47] SELECTIVE AREA EPITAXY OF GAAS USING GAAS OXIDE AS A MASK
    HIRATANI, Y
    OHKI, Y
    SUGIMOTO, Y
    AKITA, K
    TANEYA, M
    HIDAKA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1360 - L1362
  • [48] SELECTIVE-AREA MOLECULAR-BEAM EPITAXY OF ZNSE THIN-FILMS
    YAO, T
    MINATO, T
    MAEKAWA, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4236 - 4239
  • [49] Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
    Kim, Hyunseok
    Ren, Dingkun
    Farrell, Alan C.
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2018, 29 (08)
  • [50] Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy
    Nishinaga, Jiro
    Aihara, Tomoyuki
    Toda, Takeshi
    Matsutani, Fumio
    Horikoshi, Yoshiji
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1587 - 1590