Photo-enhanced magnetoresistance effect in GaAs with nanoscale magnetic clusters

被引：7
|
作者：
Shon, Y
Yuldashev, SU
Fan, XJ
Fu, DJ
Kwon, YH
Hong, CY
Kang, TW
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 5A期
关键词：
GaAs; ion implantation; ferromagnetic clusters; giant magnetoresistance;
D O I：
10.1143/JJAP.40.3082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Enhanced positive magnetoresistance effect under light illumination has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic clusters were embedded into GaAs by using Mn ion implantation and rapid thermal annealing Positive magnetoresistance in these structures has been observed and attributed to the scattering of charge carriers by the nanomagnet-dipole field. The enhancement of positive magnetoresistance under light illumination is due to a higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation.
引用
收藏
页码：3082 / 3084
页数：3
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