Vertically integrated silicon-germanium nanowire field-effect transistor

被引：23

作者：

Rosaz, G. ^{[1
,2
]}

Salem, B. ^{[1
]}

Pauc, N. ^{[2
]}

Potie, A. ^{[1
]}

Gentile, P. ^{[2
]}

Baron, T. ^{[1
]}

机构：

[1] CEA Grenoble, LTM UMR CNRS UJF 5129, F-38054 Grenoble, France

[2] CEA Grenoble, INAC SP2M SiNaPS, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 19期

关键词：

D O I：

10.1063/1.3660244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage close to 3.9V, an I-ON/I-OFF ratio of 10(4). The subthreshold slope was estimated to be around 0.9V/decade and explained by a high traps density at the nanowire core/oxide shell interface with an estimated density of interface traps D-it similar to 1.2 x 10(13) cm(-2) eV(-1). Comparisons are made with both vertical Si and horizontal SiGe FETs performances. (C) 2011 American Institute of Physics. [doi:10.1063/1.3660244]

引用

页数：3

共 24 条

[1] Vertical surround-gated silicon nanowire impact ionization field-effect transistors [J].

Bjoerk, M. T. ;

Hayden, O. ;

Schmid, H. ;

Riel, H. ;

Riess, W. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[2] Vertical wrap-gated nanowire transistors [J].

Bryllert, T ;

Wernersson, LE ;

Löwgren, T ;

Samuelson, L .

NANOTECHNOLOGY, 2006, 17 (11) :S227-S230

[3] Silicon vertically integrated nanowire field effect transistors [J].

Goldberger, Josh ;

Hochbaum, Allon I. ;

Fan, Rong ;

Yang, Peidong .

NANO LETTERS, 2006, 6 (05) :973-977

[4] Fully depleted nanowire field-effect transistor in inversion mode [J].

Hayden, Oliver ;

Bjoerk, Mikael T. ;

Schmid, Heinz ;

Riel, Heike ;

Drechsler, Ute ;

Karg, Siegfried F. ;

Loertscher, Emanuel ;

Riess, Walter .

SMALL, 2007, 3 (02) :230-234

[5] Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique [J].

Jiang, Y. ;

Singh, N. ;

Liow, T. Y. ;

Loh, W. Y. ;

Balakumar, S. ;

Hoe, K. M. ;

Tung, C. H. ;

Bliznetsov, V. ;

Rustagi, S. C. ;

Lo, G. Q. ;

Chan, D. S. H. ;

Kwong, D. L. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (06) :595-598

[6] Reduced carrier backscattering in heterojunction SiGe nanowire channels [J].

Jiang, Y. ;

Singh, N. ;

Liow, T. Y. ;

Lo, G. Q. ;

Chan, D. S. H. ;

Kwong, D. L. .

APPLIED PHYSICS LETTERS, 2008, 93 (25)

[7] Ambient field effects on the current-voltage characteristics of nanowire field effect transistors [J].

Karmalkar, Shreepad ;

Maheswaran, K. R. K. ;

Gurugubelli, Vijayakumar .

APPLIED PHYSICS LETTERS, 2011, 98 (06)

[8] Raman and electron microscopic studies of Si1-xGex alloy nanowires grown by chemical vapor deposition [J].

Kawashima, Takahiro ;

Imamura, Goh ;

Fujii, Minoru ;

Hayashi, Shinji ;

Saitoh, Tohru ;

Komori, Kazunori .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)

[9] Fabrication of Si1-xGex alloy nanowire field-effect transistors [J].

Kim, Cheol-Joo ;

Yang, Jee-Eun ;

Lee, Hyun-Seung ;

Jang, Hyun M. ;

Jo, Moon-Ho ;

Park, Won-Hwa ;

Kim, Zee Hwan ;

Maeng, Sunglyul .

APPLIED PHYSICS LETTERS, 2007, 91 (03)

[10] Nanowire electronic and optoelectronic devices [J].

Li, Yat ;

Qian, Fang ;

Xiang, Jie ;

Lieber, Charles M. .

MATERIALS TODAY, 2006, 9 (10) :18-27

← 1 2 3 →